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US Patent Issued to Sandisk Technologies on June 30 for "Memory device containing ferroelectric-spacer-ferroelectric memory elements and method of making the same" (California Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,291, issued on June 30, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Memory device containing ferroelectric-spacer-ferroe... और पढ़ें


US Patent Issued to SK hynix on June 30 for "Semiconductor device including a plurality of dielectric layers stacked on ferroelectric layer" (South Korean Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,292, issued on June 30, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Semiconductor device including a plurality of dielectric l... और पढ़ें


US Patent Issued to Micron Technology on June 30 for "Memory device assembly with a leaker device" (Idaho, Colorado Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,293, issued on June 30, was assigned to Micron Technology Inc. (Boise, Idaho). "Memory device assembly with a leaker device" was invented b... और पढ़ें


US Patent Issued to UNITED MICROELECTRONICS on June 30 for "Resistive memory device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,294, issued on June 30, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Resistive memory device and manufacturing m... और पढ़ें


US Patent Issued to MACRONIX INTERNATIONAL on June 30 for "Three dimensional semiconductor device stack, system having the same, and method of operating three dimensional semiconductor device stack" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,295, issued on June 30, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan). "Three dimensional semiconductor device stack, s... और पढ़ें


US Patent Issued to TEXAS INSTRUMENTS on June 30 for "Method to suppress base poly linkup overgrowth into the emitter cavity during silicon germanium selective epitaxy growth" (Maine, Texas Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,296, issued on June 30, was assigned to TEXAS INSTRUMENTS Inc. (Dallas). "Method to suppress base poly linkup overgrowth into the emitter c... और पढ़ें


US Patent Issued to THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS on June 30 for "High electron mobility transistor (HEMT) comprising stacked nanowire or nanosheet heterostructures" (Texas, Illinois Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,297, issued on June 30, was assigned to THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS (Urbana, Ill.). "High electron mobility transis... और पढ़ें


US Patent Issued to Taiwan Semiconductor Manufacturing on June 30 for "Semiconductor device and method" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,298, issued on June 30, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device and method" wa... और पढ़ें


US Patent Issued to INTERNATIONAL BUSINESS MACHINES on June 30 for "Vertical transport field-effect transistor with late fin cut" (New York Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,299, issued on June 30, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.). "Vertical transport field-effect transistor w... और पढ़ें


US Patent Issued to GLOBALFOUNDRIES U.S. on June 30 for "Nanosheet structures with corner spacer" (Belgian, American Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,300, issued on June 30, was assigned to GLOBALFOUNDRIES U.S. Inc (Malta, N.Y.). "Nanosheet structures with corner spacer" was invented by B... और पढ़ें