US Patent Issued to THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS on June 30 for "High electron mobility transistor (HEMT) comprising stacked nanowire or nanosheet heterostructures" (Texas, Illinois Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,297, issued on June 30, was assigned to THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS (Urbana, Ill.).

"High electron mobility transistor (HEMT) comprising stacked nanowire or nanosheet heterostructures" was invented by Xiuling Li (Austin, Texas) and Shaloo Rakheja (Champaign, Ill.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A high electron mobility transistor (HEMT) for high frequency applications comprises: a source and a drain spaced apart on a substrate, each of the source and drain extending vertically away from the substrate; a stack of nanowire or nanosheet heterostructures suspended between the source and the drain and being vertical...