US Patent Issued to Micron Technology on June 30 for "Memory device assembly with a leaker device" (Idaho, Colorado Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,293, issued on June 30, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory device assembly with a leaker device" was invented by Ashonita A. Chavan (Boise, Idaho), Aysha Siddique Shanta (Boise, Idaho) and Aditi P. Kulkarni (Broomfield, Colo.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Implementations described herein relate to various structures, integrated assemblies, and memory devices. In some implementations, an integrated assembly includes a cell plate, a pillar that includes a bottom electrode and a leaker device on top of the bottom electrode, and a top electrode. The top electrode includes a first top electrode portion and a s...