US Patent Issued to GLOBALFOUNDRIES U.S. on June 30 for "Nanosheet structures with corner spacer" (Belgian, American Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,300, issued on June 30, was assigned to GLOBALFOUNDRIES U.S. Inc (Malta, N.Y.).

"Nanosheet structures with corner spacer" was invented by Bartlomiej J. Pawlak (Leuven, Belgium) and Judson R. Holt (Ballston Lake, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to semiconductor structures and, more particularly, to nanosheet transistor structures and methods of manufacture. The structure includes: a plurality of stacked semiconductor nanosheets over a semiconductor substrate; a plurality of gate structures surrounding individual nanosheets of the plurality of semiconductor nanosheets; an inner sidewall spacer adjacen...