ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,299, issued on June 30, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.).

"Vertical transport field-effect transistor with late fin cut" was invented by Tsung-Sheng Kang (Ballston Lake, N.Y.), Tao Li (Slingerlands, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Julien Frougier (Albany, N.Y.) and Reinaldo Vega (Mahopac, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "One or more devices and/or methods provided herein relate to a method for fabricating a semiconductor device, and more particularly for fabricating at least a portion of a vertical transport field effect transistor. The semiconductor device comprises a field-effect transmi...