US Patent Issued to UNITED MICROELECTRONICS on June 30 for "Resistive memory device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,294, issued on June 30, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"Resistive memory device and manufacturing method thereof" was invented by Chih-Wei Kuo (Tainan City, Taiwan) and Chung-Yi Chiu (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A resistive memory device includes a dielectric layer, a trench, a first resistive switching element, a diode via structure, and a signal line structure. The trench is disposed in the dielectric layer. The first resistive switching element is disposed in the trench. The first resistive switching element includes a first bottom electrode, a first top electrode disp...