ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,298, issued on June 30, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor device and method" was invented by Wan-Yi Kao (Baoshan Township, Taiwan), Che-Hao Chang (Hsinchu, Taiwan), Yung-Cheng Lu (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a fin extending from a substrate; forming an first isolation region along opposing sidewalls of the fin; forming a gate structure over the fin; forming an epitaxial source/drain region in the fin adjacent the gate structure; forming an etch stop layer over the epitaxial source/drain region and...