US Patent Issued to SK hynix on June 30 for "Semiconductor device including a plurality of dielectric layers stacked on ferroelectric layer" (South Korean Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,292, issued on June 30, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor device including a plurality of dielectric layers stacked on ferroelectric layer" was invented by Won Tae Koo (Icheon-si, South Korea), Dong Ik Suh (Icheon-si, South Korea) and Se Ho Lee (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first electrode, a ferroelectric layer disposed on the first electrode and implementing a negative capacitance, a dielectric structure disposed on the ferroelectric layer and including a first dielectric layer and a second dielectric layer that are alternately stacked, ...