US Patent Issued to TEXAS INSTRUMENTS on June 30 for "Method to suppress base poly linkup overgrowth into the emitter cavity during silicon germanium selective epitaxy growth" (Maine, Texas Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,296, issued on June 30, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Method to suppress base poly linkup overgrowth into the emitter cavity during silicon germanium selective epitaxy growth" was invented by Jerald Rock (Lisbon, Maine), Thomas Moutinho (Gorham, Maine), Tatsuya Tominari (Plano, Texas) and Thanas Budri (Portland, Maine).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a heterojunction bipolar transistor (HBT) having a collector, a base, and an emitter. The base includes a monocrystalline base layer, including silicon-germanium, on the collector, and an extrinsic base layer, including polycrystalline si...