US Patent Issued to Sandisk Technologies on June 30 for "Memory device containing ferroelectric-spacer-ferroelectric memory elements and method of making the same" (California Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,291, issued on June 30, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Memory device containing ferroelectric-spacer-ferroelectric memory elements and method of making the same" was invented by Adarsh Rajashekhar (Santa Clara, Calif.), Raghuveer S. Makala (Campbell, Calif.), Kartik Sondhi (Milpitas, Calif.), Rahul Sharangpani (Fremont, Calif.) and Fei Zhou (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A ferroelectric memory device includes an alternating stack of insulating layers and composite layers that are interlaced along a vertical direction, a memory opening vertically extending through the alternating stack...