ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,162, issued on Sept. 8, was assigned to KIOXIA Corp. (Tokyo). "Semiconductor memory device with gate electrode having multiple portions" wa... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,163, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Three-dimensional nonvolatile memory device ... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,164, issued on Sept. 8, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Methods and devices for 3D NAND using silicon-and-ha... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,165, issued on Sept. 8, was assigned to Kioxia Corp. (Tokyo). "Semiconductor device and method of manufacturing the same" was invented by C... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,166, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Three-dimensional semiconductor memory devic... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,167, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Bonding type vertical semiconductor devices"... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,168, issued on Sept. 8, was assigned to SUNRISE MEMORY Corp. (San Jose, Calif.). "3-dimensional NOR memory array with very fine pitch: devi... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,169, issued on Sept. 8, was assigned to INTEL NDTM US LLC (Santa Clara, Calif.). "Barrier and thin spacer for 3D-NAND complementary metal-o... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,170, issued on Sept. 8, was assigned to Kioxia Corp. (Tokyo). "Semiconductor memory device and method of manufacturing semiconductor memory... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,171, issued on Sept. 8, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China). "Semiconductor device structure and manufactur... Read More