US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Sept. 8 for "Semiconductor device structure and manufacturing method therefor" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,171, issued on Sept. 8, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Semiconductor device structure and manufacturing method therefor" was invented by Xin Wang (Wuhan, China), Cheng Gan (Wuhan, China) and Wu Tian (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed in the application are a semiconductor device structure and a manufacturing method thereof. The semiconductor device structure includes: a semiconductor substrate; active regions and isolation structures located in the semiconductor substrate and arranged alternately at intervals in a first direction, the active regions extending in a second dire...