US Patent Issued to Kioxia on Sept. 8 for "Semiconductor device and method of manufacturing the same" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,165, issued on Sept. 8, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor device and method of manufacturing the same" was invented by Chieko Shigeno (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In one embodiment, a semiconductor device includes a substrate, and a stacked film including a plurality of first layers and a plurality of second layers alternately provided on the substrate. The device further includes a charge storage layer provided on a side face of the stacked film via a first insulator, and a semiconductor layer provided on a side face of the charge storage layer via a second insulator. Furthermore, one of the pl...