ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,163, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Three-dimensional nonvolatile memory device including a plurality of memory cells" was invented by Kohji Kanamori (Suwon-Si, South Korea) and Jeehoon Han (Suwon-Si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional nonvolatile memory device includes: a plurality of insulating layers stacked on a substrate in a vertical direction substantially perpendicular to a surface of the substrate; a plurality of channel layers positioned between the plurality of insulating layers, and elongated in a first horizontal direction that is para...