US Patent Issued to Kioxia on Sept. 8 for "Semiconductor memory device and method of manufacturing semiconductor memory device" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,170, issued on Sept. 8, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor memory device and method of manufacturing semiconductor memory device" was invented by Karin Takayama (Yokkaichi, Japan), Hiroshi Kanno (Yokkaichi, Japan) and Hideto Takekida (Nagoya, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes: a stack having conductive layers and insulating layers, the conductive layers including a first select gate line connected to a gate of a first select transistor, a word line provided above the first select gate line and connected to a gate of a memory transistor, and a second select gate line provided...