US Patent Issued to KIOXIA on Sept. 8 for "Semiconductor memory device with gate electrode having multiple portions" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,162, issued on Sept. 8, was assigned to KIOXIA Corp. (Tokyo).

"Semiconductor memory device with gate electrode having multiple portions" was invented by Takehiro Nakai (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes: a semiconductor substrate having a surface extending in an X direction and a Y direction; a circuit region formed on the semiconductor substrate and having at least one side extending in the Y direction; a guard ring line extending along the Y direction and opposed to the one side of the circuit region in the X direction; an element isolation region extending along the Y direct...