ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,164, issued on Sept. 8, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Methods and devices for 3D NAND using silicon-and-halogen-containing materials" was invented by Dimitrios Pavlopoulos (Glendale, Calif.), Rui Cheng (San Jose, Calif.), Qinghua Zhao (Sunnyvale, Calif.) and Karthik Janakiraman (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. Alternating layers of ma...