ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,784, issued on April 21, was assigned to Canon K.K. (Tokyo). "Systems, devices, and methods for registering a superstrate of an imprint to... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,785, issued on April 21, was assigned to HITACHI LTD. (Tokyo). "Semiconductor device and method for manufacturing the same" was invented b... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,786, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor layout structure and semico... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,787, issued on April 21, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Asymmetric pads structure and test element gro... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,788, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Method of processing photoresist layer, a... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,789, issued on April 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Method of manufacturing a sem... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,790, issued on April 21, was assigned to ASM IP Holding B.V. (Almere, Netherlands). "Structure including a photoresist underlayer and meth... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,791, issued on April 21, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Method of forming carbon-based spacer for EUV phot... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,792, issued on April 21, was assigned to SiCrystal GmbH (Nuremberg, Germany). "Chamfered silicon carbide substrate and method of chamferin... Read More
ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,793, issued on April 21, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan). "Method of manufacturing memory device" was in... Read More