US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Method of processing photoresist layer, and photoresist layer" (Chinese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,788, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Method of processing photoresist layer, and photoresist layer" was invented by Kanyu Cao (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to the technical field of semiconductors, and provides a method of processing a photoresist layer, and a photoresist layer. The method of processing a photoresist layer includes: forming a photoresist layer on a target layer, where the photoresist layer includes a first part close to the target layer and a second part away from the target layer; performing first exposure...