ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,785, issued on April 21, was assigned to HITACHI LTD. (Tokyo).
"Semiconductor device and method for manufacturing the same" was invented by Haruka Shimizu (Tokyo) and Hiromi Shimazu (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "An accelerated test for applying a high voltage is performed without reducing a manufacturing yield of a semiconductor device using a wide gap semiconductor material. The technical idea in the embodiment is, for example, an idea of performing the accelerated test in the state of a semiconductor wafer to distinguish a latent defect as illustrated in FIG. 4. That is, the technical idea in the embodiment is to perform t...