US Patent Issued to SiCrystal on April 21 for "Chamfered silicon carbide substrate and method of chamfering" (German Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,792, issued on April 21, was assigned to SiCrystal GmbH (Nuremberg, Germany).

"Chamfered silicon carbide substrate and method of chamfering" was invented by Bernhard Ecker (Nuremberg, Germany), Ralf Muller (Zirndorf, Germany), Matthias Stockmeier (Egloffstein, Germany), Michael Vogel (Nuremberg, Germany) and Arnd-Dietrich Weber (Forchheim, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention relates to a chamfered silicon carbide substrate which is essentially monocrystalline, and to a corresponding method of chamfering a silicon carbide substrate. A silicon carbide substrate according to the invention comprises a main surfa...