US Patent Issued to MACRONIX International on April 21 for "Method of manufacturing memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,793, issued on April 21, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan).

"Method of manufacturing memory device" was invented by Hsun-Wei Chang (Hsinchu County, Taiwan), Kuang-Wei Chen (Hsinchu City, Taiwan), Tuung Luoh (Taipei City, Taiwan), Ta-Hung Yang (Miaoli County, Taiwan) and Kuang-Chao Chen (Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a memory device at least includes the following steps. A first interconnect and a first dielectric layer are formed on a substrate. A first chemical mechanical polishing process is performed on the first dielectric layer. A stack structure is ...