US Patent Issued to SAMSUNG ELECTRONICS, UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY) on June 30 for "Complex of heterogeneous two-dimensional materials and method of manufacturing the same" (South Korean Inventors)

Posted On: 2026-07-16

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,320, issued on June 30, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea) and UNIST (ULSAN NATIONAL INSTITUTE OF SCIEN... Read More

US Patent Issued to Invention And Collaboration Laboratory, Etron Technology on June 30 for "Metal-oxide-semiconductor field-effect transistor structure with low leakage current and reserved gate length" (Taiwanese Inventor)

Posted On: 2026-07-16

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ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,321, issued on June 30, was assigned to Invention And Collaboration Laboratory Pte. Ltd. (Singapore) and Etron Technology Inc. (Hsinchu, Tai... Read More

US Patent Issued to GlobalFoundries U.S. on June 30 for "Semiconductor device including porous semiconductor material adjacent an isolation structure" (New York, Vermont Inventors)

Posted On: 2026-07-16

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ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,322, issued on June 30, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.). "Semiconductor device including porous semiconductor mater... Read More

US Patent Issued to ROHM on June 30 for "Semiconductor device including an organic film covering a projecting structure" (Japanese Inventor)

Posted On: 2026-07-16

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ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,323, issued on June 30, was assigned to ROHM Co. LTD. (Kyoto, Japan). "Semiconductor device including an organic film covering a projecting... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on June 30 for "Memory devices and methods of manufacturing thereof" (Taiwanese Inventors)

Posted On: 2026-07-16

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ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,324, issued on June 30, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Memory devices and methods of manuf... Read More

US Patent Issued to Intel on June 30 for "Integrated circuit structures having raised epitaxy on channel transistor" (Oregon Inventors)

Posted On: 2026-07-16

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ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,325, issued on June 30, was assigned to Intel Corp. (Santa Clara, Calif.). "Integrated circuit structures having raised epitaxy on channel ... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 30 for "Semiconductor structure and method for forming the same" (Taiwanese Inventors)

Posted On: 2026-07-16

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ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,326, issued on June 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor structure and met... Read More

US Patent Issued to Micron Technology on June 30 for "Electronic devices comprising pillars extending through a semiconductor material and adjacent to a source implant region, and related electronic systems and methods" (Idaho Inventors)

Posted On: 2026-07-16

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ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,327, issued on June 30, was assigned to Micron Technology Inc. (Boise, Idaho). "Electronic devices comprising pillars extending through a s... Read More

US Patent Issued to MITSUBISHI ELECTRIC on June 30 for "Silicon carbide semiconductor device" (Japanese Inventor)

Posted On: 2026-07-16

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ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,328, issued on June 30, was assigned to MITSUBISHI ELECTRIC Corp. (Tokyo). "Silicon carbide semiconductor device" was invented by Takaaki T... Read More

US Patent Issued to Hitachi on June 30 for "Silicon carbide semiconductor device" (Japanese Inventors)

Posted On: 2026-07-16

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ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,329, issued on June 30, was assigned to Hitachi Ltd. (Tokyo). "Silicon carbide semiconductor device" was invented by Takeru Suto (Tokyo), K... Read More

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US Patent Issued to SAMSUNG ELECTRONICS, UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY) on June 30 for "Complex of heterogeneous two-dimensional materials and method of manufacturing the same" (South Korean Inventors)

US Patent Issued to Invention And Collaboration Laboratory, Etron Technology on June 30 for "Metal-oxide-semiconductor field-effect transistor structure with low leakage current and reserved gate length" (Taiwanese Inventor)

US Patent Issued to GlobalFoundries U.S. on June 30 for "Semiconductor device including porous semiconductor material adjacent an isolation structure" (New York, Vermont Inventors)

US Patent Issued to ROHM on June 30 for "Semiconductor device including an organic film covering a projecting structure" (Japanese Inventor)

US Patent Issued to Taiwan Semiconductor Manufacturing on June 30 for "Memory devices and methods of manufacturing thereof" (Taiwanese Inventors)

US Patent Issued to Intel on June 30 for "Integrated circuit structures having raised epitaxy on channel transistor" (Oregon Inventors)

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 30 for "Semiconductor structure and method for forming the same" (Taiwanese Inventors)

US Patent Issued to Micron Technology on June 30 for "Electronic devices comprising pillars extending through a semiconductor material and adjacent to a source implant region, and related electronic systems and methods" (Idaho Inventors)

US Patent Issued to MITSUBISHI ELECTRIC on June 30 for "Silicon carbide semiconductor device" (Japanese Inventor)

US Patent Issued to Hitachi on June 30 for "Silicon carbide semiconductor device" (Japanese Inventors)