US Patent Issued to Taiwan Semiconductor Manufacturing on June 30 for "Memory devices and methods of manufacturing thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,324, issued on June 30, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory devices and methods of manufacturing thereof" was invented by Meng-Sheng Chang (Chu-bei City, Taiwan), Chia-En Huang (Xinfeng Township, Taiwan) and Yih Wang (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes first nanostructures stacked on top of one another; first gate stacks, where two adjacent ones of the first gate stacks wrap around a corresponding first nanostructure; second nanostructures stacked on top of one another; second gate stacks, where two adjacent ones of the second gate stacks wra...