US Patent Issued to GlobalFoundries U.S. on June 30 for "Semiconductor device including porous semiconductor material adjacent an isolation structure" (New York, Vermont Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,322, issued on June 30, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Semiconductor device including porous semiconductor material adjacent an isolation structure" was invented by Shesh Mani Pandey (Saratoga Springs, N.Y.) and Rajendran Krishnasamy (Essex Junction, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are embodiments of a semiconductor structure including a semiconductor device with an active device region and, within the active device region, porous semiconductor material adjacent to an isolation structure. In some embodiments, the semiconductor device can be a laterally diffused metal oxide semiconductor field e...