ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,329, issued on June 30, was assigned to Hitachi Ltd. (Tokyo).
"Silicon carbide semiconductor device" was invented by Takeru Suto (Tokyo), Keisuke Kobayashi (Tokyo), Tomoka Suematsu (Tokyo) and Haruka Shimizu (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide semiconductor device includes: a trench formed on an upper surface of a silicon carbide semiconductor substrate; a gate electrode in the trench; an n-type drift layer, a p-type guard region, an n-type semiconductor region to which a source potential is applied, a p-type body layer and an n-type current diffusion region that have a lower impurity concentration than that of th...