US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 30 for "Semiconductor structure and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,326, issued on June 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure and method for forming the same" was invented by Yu-Shiang Huang (Hsinchu City, Taiwan), Yen-Ting Chen (Taichung, Taiwan) and Wei-Yang Lee (Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of nanostructures formed over a substrate, and an inner spacer layer between two adjacent nanostructures. The semiconductor structure includes a source/drain (S/D) structure formed adjacent to the ...