US Patent Issued to MITSUBISHI ELECTRIC on June 30 for "Silicon carbide semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,328, issued on June 30, was assigned to MITSUBISHI ELECTRIC Corp. (Tokyo).

"Silicon carbide semiconductor device" was invented by Takaaki Tominaga (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A SiC device includes an n-type semiconductor layer provided on a SiC substrate; a p-type first well region is provided in an upper layer part of the semiconductor layer; an n-type first impurity region is provided in an upper layer part of the first well region; a p-type first well contact region is provided in the upper layer part of the first well region and having a side surface joined to the first impurity region; a first contact electrically conn...