US Patent Issued to Intel on June 30 for "Integrated circuit structures having raised epitaxy on channel transistor" (Oregon Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,325, issued on June 30, was assigned to Intel Corp. (Santa Clara, Calif.).

"Integrated circuit structures having raised epitaxy on channel transistor" was invented by Abhishek Anil Sharma (Portland, Ore.), Tahir Ghani (Portland, Ore.), Rishabh Mehandru (Portland, Ore.), Anand S. Murthy (Portland, Ore.), Wilfred Gomes (Portland, Ore.), Cory Weber (Hillsboro, Ore.) and Sagar Suthram (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Structures having raised epitaxy on channel structure transistors are described. In an example, an integrated circuit structure includes a channel structure having multi-layer epitaxial source or drain structur...