ALEXANDRIA, Va., June 9 -- United States Patent no. 12,653,008, issued on June 9, was assigned to Eugenus Inc. (San Jose, Calif.). "Multi-region diffusion barrier containing titanium, silicon and nit... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,653,009, issued on June 9, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.). "Negative-tone organic dielectric with fine met... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,653,010, issued on June 9, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Adaptive interconnect structure for s... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,653,011, issued on June 9, was assigned to Micron Technology Inc. (Boise, Idaho). "Microelectronic devices including staircase structures and, m... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,653,012, issued on June 9, was assigned to Sony Semiconductor Solutions Corp. (Kanagawa, Japan). "Semiconductor device with through hole electro... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,653,013, issued on June 9, was assigned to Micron Technology Inc. (Boise, Idaho). "Advanced interconnection for wafer on wafer packaging" was in... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,653,014, issued on June 9, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor device having via structure v... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,653,015, issued on June 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "SRAM middle strap with feedthroug... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,653,016, issued on June 9, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Methods of forming metal ion barrier ... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,653,017, issued on June 9, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Interconnect structure of semiconductor device... Read More