US Patent Issued to Sony Semiconductor Solutions on June 9 for "Semiconductor device with through hole electrode wiring" (Japanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,653,012, issued on June 9, was assigned to Sony Semiconductor Solutions Corp. (Kanagawa, Japan).

"Semiconductor device with through hole electrode wiring" was invented by Takushi Shigetoshi (Kanagawa, Japan) and Yoshiaki Yanagawa (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a semiconductor device provided with a through electrode, thermal stress is reduced. The semiconductor device includes a semiconductor substrate, a wiring layer, a first through hole, and a first inner through electrode. In the semiconductor device, the wiring layer is formed on a front surface of the semiconductor substrate. Furthermore, in the semiconductor device, the f...