US Patent Issued to Eugenus on June 9 for "Multi-region diffusion barrier containing titanium, silicon and nitrogen" (California Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,653,008, issued on June 9, was assigned to Eugenus Inc. (San Jose, Calif.).

"Multi-region diffusion barrier containing titanium, silicon and nitrogen" was invented by Vinayak Veer Vats (San Ramon, Calif.), M. Ziaul Karim (San Jose, Calif.), Bo Seon Choi (Sunnyvale, Calif.), Somilkumar J. Rathi (San Jose, Calif.) and Niloy Mukherjee (San Ramon, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosed technology generally relates to semiconductor structures and their fabrication, and more particularly to diffusion barrier structures containing Ti, Si, N and methods of forming same. A method of forming an electrically conductive diffusion barrier...