US Patent Issued to Taiwan Semiconductor Manufacturing on June 9 for "Methods of forming metal ion barrier layers and resulting structures" (Taiwanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,653,016, issued on June 9, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Methods of forming metal ion barrier layers and resulting structures" was invented by Chih-Pin Chiu (Hsinchu, Taiwan), Yu-Bey Wu (Hsinchu, Taiwan) and Dian-Hau Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A first bond pad of a first device and a second bond pad of a second device are implanted with metal ions. The first and second semiconductor device are bonded together using a direct metal-to-metal bond and an overlay offset occurs between the bond pads such that a portion of the first bond pad and a portion of the second b...