US Patent Issued to SAMSUNG ELECTRONICS on June 9 for "Semiconductor device having via structure vertically penetrating metal layer and substrate" (South Korean Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,653,014, issued on June 9, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Semiconductor device having via structure vertically penetrating metal layer and substrate" was invented by Seonhaeng Lee (Suwon-si, South Korea), Hyunggyun Noh (Suwon-si, South Korea) and Sung-Mock Ha (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include a substrate having a first surface and a second surface opposite to the first surface, a protection layer on the first surface of the substrate, metal layers in the substrate, extending in a first direction parallel to the first surface, and spaced apart...