US Patent Issued to GlobalFoundries U.S. on April 21 for "Structure with buried doped region and methods to form same" (Singaporean, American Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,592, issued on April 21, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.). "Structure with buried doped region and methods to form ... Read More

US Patent Issued to Diodes on April 21 for "Power MOSFET with gate-source ESD diode structure" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,593, issued on April 21, was assigned to Diodes Inc. (Plano, Texas). "Power MOSFET with gate-source ESD diode structure" was invented by W... Read More

US Patent Issued to Mitsubishi Electric on April 21 for "Semiconductor device and power conversion apparatus" (Japanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,594, issued on April 21, was assigned to Mitsubishi Electric Corp. (Tokyo). "Semiconductor device and power conversion apparatus" was inve... Read More

US Patent Issued to SAMSUNG ELECTRONICS on April 21 for "Integrated circuit device" (South Korean Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,595, issued on April 21, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Integrated circuit device" was invented by... Read More

US Patent Issued to Nexperia on April 21 for "Lateral power semiconductor device" (Dutch Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,596, issued on April 21, was assigned to Nexperia BV (Nijmegen, Netherlands). "Lateral power semiconductor device" was invented by Stefano... Read More

US Patent Issued to ROHM on April 21 for "SiC semiconductor device with mesa trench structure and sidewall wiring" (Japanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,597, issued on April 21, was assigned to ROHM Co. LTD. (Kyoto, Japan). "SiC semiconductor device with mesa trench structure and sidewall w... Read More

US Patent Issued to Infineon Technologies Canada on April 21 for "Field plate biasing of high electron mobility transistor" (Canadian, Indian, American Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,601, issued on April 21, was assigned to Infineon Technologies Canada Inc. (Ottawa). "Field plate biasing of high electron mobility transi... Read More

US Patent Issued to NANYA TECHNOLOGY on April 21 for "Semiconductor device and manufacture method" (Taiwanese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,602, issued on April 21, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device and manufacture method" w... Read More

US Patent Issued to DENSO on April 21 for "Silicon carbide semiconductor device, inverter circuit using the same, and method for manufacturing silicon carbide semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,603, issued on April 21, was assigned to DENSO Corp. (Kariya-city, Japan). "Silicon carbide semiconductor device, inverter circuit using t... Read More

US Patent Issued to GLOBALFOUNDRIES U.S. on April 21 for "Cross couple design for high density standard cells" (New York, California Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,604, issued on April 21, was assigned to GLOBALFOUNDRIES U.S. Inc (Malta, N.Y.). "Cross couple design for high density standard cells" was... Read More

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