US Patent Issued to DENSO on April 21 for "Silicon carbide semiconductor device, inverter circuit using the same, and method for manufacturing silicon carbide semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,603, issued on April 21, was assigned to DENSO Corp. (Kariya-city, Japan).

"Silicon carbide semiconductor device, inverter circuit using the same, and method for manufacturing silicon carbide semiconductor device" was invented by Junichi Uehara (Kariya-city, Japan) and Yusuke Hayama (Kariya-city, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A SiC semiconductor device includes a substrate of a first conductivity type, a buffer layer of the first conductivity type on the substrate, a low-concentration layer on the buffer layer, a first deep layer and a JFET portion on the low-concentration layer, a current diffusion layer of the first conduct...