ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,595, issued on April 21, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Integrated circuit device" was invented by Sangmoon Lee (Suwon-si, South Korea), Jinbum Kim (Seoul, South Korea), Hyojin Kim (Hwaseong-si, South Korea), Yongjun Nam (Hwaseong-si, South Korea) and Sujin Jung (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit (IC) device includes a fin-type active region extending on a substrate in a first lateral direction. A gate line extends on the fin-type active region in a second lateral direction. The second lateral direction intersects the first lateral direction. A chann...