US Patent Issued to GlobalFoundries U.S. on April 21 for "Structure with buried doped region and methods to form same" (Singaporean, American Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,592, issued on April 21, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Structure with buried doped region and methods to form same" was invented by Sagar Premnath Karalkar (Essex Junction, Vt.), Jie Zeng (Singapore) and Souvick Mitra (Essex Junction, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosure provides a structure with a buried doped region, and methods to form the same. A structure may include a semiconductor substrate including a first well. A first terminal includes a first doped region in the first well. A second terminal includes a second doped region in the first well. The first well horizontally separates th...