ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,596, issued on April 21, was assigned to Nexperia BV (Nijmegen, Netherlands).
"Lateral power semiconductor device" was invented by Stefano Dalcanale (Nijmegen, Netherlands), Adam Brown (Nijmegen, Netherlands) and Jim Parkin (Nijmegen, Netherlands).
According to the abstract* released by the U.S. Patent & Trademark Office: "A lateral power semiconductor device is provided. Some semiconductor devices show signs of failure caused by a short between metal layers, which have showed cracks in the insulator layer between the two metals which causes the short-circuit. Removing the superimposition between the borders of the metal layers reduces the risk of cracks in the insulator layer a...