US Patent Issued to Infineon Technologies Canada on April 21 for "Field plate biasing of high electron mobility transistor" (Canadian, Indian, American Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,601, issued on April 21, was assigned to Infineon Technologies Canada Inc. (Ottawa).

"Field plate biasing of high electron mobility transistor" was invented by Marco A. Zuniga (Berkeley, Calif.), Thomas William Macelwee (Nepean, Canada), Rohan Samsi (Milpitas, Calif.), Lucas Andrew Milner (Sunnyvale, Calif.), Vineet Unni (Kanata, Canada), Jayasimha S. Prasad (Upland, Calif.), Ashutosh Ravindra Joharapurkar (Bangalore, India) and Ramesh G. Karpur (Bangalore, India).

According to the abstract* released by the U.S. Patent & Trademark Office: "The biasing of one or more field plates of a high electron mobility transistor (a HEMT) with a non-zero voltage to thereby affect the electri...