ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,602, issued on April 21, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).
"Semiconductor device and manufacture method" was invented by Feng Wen Hsu (New Taipei City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a patterned substrate, a first barrier layer, a second barrier layer and a conductive layer. The patterned substrate has a trench and a sidewall surrounding the trench. The first barrier layer disposed on a first portion of the sidewall. The second barrier layer with a permittivity from 0.5 to 3.8 is disposed on the first barrier layer and a second portion of the sidewall, in which t...