US Patent Issued to ROHM on April 21 for "SiC semiconductor device with mesa trench structure and sidewall wiring" (Japanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,597, issued on April 21, was assigned to ROHM Co. LTD. (Kyoto, Japan).

"SiC semiconductor device with mesa trench structure and sidewall wiring" was invented by Kenji Yamamoto (Kyoto, Japan), Seigo Mori (Kyoto, Japan), Hiroaki Shiraga (Kyoto, Japan), Yuki Nakano (Kyoto, Japan) and Masaya Ueno (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A SiC semiconductor device includes a SiC chip having a main surface that includes a first surface, a second surface hollowed in a thickness direction outside the first surface, and a connecting surface connecting the first surface and the second surface, and in which a mesa is defined by the first s...