US Patent Issued to BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY, INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on Aug. 11 for "Vertical MOSFET device" (Chinese Inventors)

Posted On: 2026-08-12

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,671, issued on Aug. 11, was assigned to BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY (Beijing) and INSTITUTE OF MICROELECTRONICS, CHINES... Read More

US Patent Issued to FUJI ELECTRIC on Aug. 11 for "Silicon carbide semiconductor device and method for producing same" (Japanese Inventor)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,672, issued on Aug. 11, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan). "Silicon carbide semiconductor device and method for prod... Read More

US Patent Issued to STMICROELECTRONICS on Aug. 11 for "Silicon carbide integrated device and method for manufacturing an integrated device" (Italian Inventor)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,673, issued on Aug. 11, was assigned to STMICROELECTRONICS S.r.l. (Agrate Brianza, Italy). "Silicon carbide integrated device and method fo... Read More

US Patent Issued to Infineon Technologies Austria on Aug. 11 for "Semiconductor device having gate trenches and field plate trenches and a method of fabricating the semiconductor device" (Austrian, American Inventors)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,675, issued on Aug. 11, was assigned to Infineon Technologies Austria AG (Villach, Austria). "Semiconductor device having gate trenches and... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "3D-stacked semiconductor device including source/drain regions vertically isolated from each other by strengthened isolation structure" (New York, Virginia Inventors)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,677, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "3D-stacked semiconductor device including so... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 11 for "Semiconductor device and method for forming the same" (Taiwanese Inventor)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,678, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device and method... Read More

US Patent Issued to International Business Machines on Aug. 11 for "Shifted-channel stacked FETs" (New York Inventors)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,679, issued on Aug. 11, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Shifted-channel stacked FETs" was invented b... Read More

US Patent Issued to Semiconductor Energy Laboratory on Aug. 11 for "Semiconductor device and method for manufacturing semiconductor device" (Japanese Inventors)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,680, issued on Aug. 11, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan). "Semiconductor device and method for manu... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 11 for "Multigate transistors with capping layers and a buffer layer comprising germanium" (Taiwanese Inventors)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,681, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Multigate transistors with capp... Read More

US Patent Issued to NEXPERIA on Aug. 11 for "Semiconductor device with improved junction termination extension" (German Inventors)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,682, issued on Aug. 11, was assigned to NEXPERIA B.V. (Nijmegen, Netherlands). "Semiconductor device with improved junction termination ext... Read More

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US Patent Issued to BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY, INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on Aug. 11 for "Vertical MOSFET device" (Chinese Inventors)

US Patent Issued to FUJI ELECTRIC on Aug. 11 for "Silicon carbide semiconductor device and method for producing same" (Japanese Inventor)

US Patent Issued to STMICROELECTRONICS on Aug. 11 for "Silicon carbide integrated device and method for manufacturing an integrated device" (Italian Inventor)

US Patent Issued to Infineon Technologies Austria on Aug. 11 for "Semiconductor device having gate trenches and field plate trenches and a method of fabricating the semiconductor device" (Austrian, American Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "3D-stacked semiconductor device including source/drain regions vertically isolated from each other by strengthened isolation structure" (New York, Virginia Inventors)

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 11 for "Semiconductor device and method for forming the same" (Taiwanese Inventor)

US Patent Issued to International Business Machines on Aug. 11 for "Shifted-channel stacked FETs" (New York Inventors)

US Patent Issued to Semiconductor Energy Laboratory on Aug. 11 for "Semiconductor device and method for manufacturing semiconductor device" (Japanese Inventors)

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 11 for "Multigate transistors with capping layers and a buffer layer comprising germanium" (Taiwanese Inventors)

US Patent Issued to NEXPERIA on Aug. 11 for "Semiconductor device with improved junction termination extension" (German Inventors)