US Patent Issued to Infineon Technologies Austria on Aug. 11 for "Semiconductor device having gate trenches and field plate trenches and a method of fabricating the semiconductor device" (Austrian, American Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,675, issued on Aug. 11, was assigned to Infineon Technologies Austria AG (Villach, Austria).

"Semiconductor device having gate trenches and field plate trenches and a method of fabricating the semiconductor device" was invented by Timothy Henson (Mount Shasta, Calif.), Harsh Naik (El Segundo, Calif.), Oliver Blank (Villach, Austria) and Gerhard Thomas Nobauer (Villach, Austria).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a plurality of transistor cells formed in a semiconductor body. The plurality of transistor cells includes: a plurality of stripe-shape gate trenches formed in a first main surface of the semicondu...