US Patent Issued to NEXPERIA on Aug. 11 for "Semiconductor device with improved junction termination extension" (German Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,682, issued on Aug. 11, was assigned to NEXPERIA B.V. (Nijmegen, Netherlands).

"Semiconductor device with improved junction termination extension" was invented by Massimo Cataldo Mazzillo (Hamburg, Germany), Georgio El-Zammar (Hamburg, Germany) and Sonke Habenicht (Hamburg, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided including: an epitaxial layer doped with a first type of charge carrier; at least one junction termination extension (JTE), embedded in the epitaxial layer so that an upper surface of the JTE is flush with an upper surface of the epitaxial layer, the JTE is doped with a second type of charge...