US Patent Issued to Semiconductor Energy Laboratory on Aug. 11 for "Semiconductor device and method for manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,680, issued on Aug. 11, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).

"Semiconductor device and method for manufacturing semiconductor device" was invented by Shunpei Yamazaki (Setagaya, Japan), Hiromi Sawai (Atsugi, Japan), Hiroki Komagata (Atsugi, Japan), Yasuhiro Jinbo (Isehara, Japan), Naoki Okuno (Yamato, Japan), Yoshihiro Komatsu (Ebina, Japan), Motoharu Ando (Kobe, Japan), Tomoaki Moriwaka (Isehara, Japan), Koji Moriya (Atsugi, Japan) and Jun Ishikawa (Isehara, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with less variation in transistor characteristics is provided. The semiconductor...