US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 11 for "Semiconductor device and method for forming the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,678, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and method for forming the same" was invented by Chih-Yang Chen (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming first and second semiconductor layers, in which a number of the first semiconductor layers is less than a number of the second semiconductor layers.Embodiments includes etching first and second semiconductor layers to form a first recess within the first semiconductor layers and a second recess within the second semiconductor layers; performing an etching process to ...