US Patent Issued to BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY, INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on Aug. 11 for "Vertical MOSFET device" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,671, issued on Aug. 11, was assigned to BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY (Beijing) and INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing).

"Vertical MOSFET device" was invented by Zhuo Chen (Beijing) and Huilong Zhu (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a vertical MOSFET device, a manufacturing method and application thereof. The method includes: forming a first silicon layer, a first germanium-silicon layer, a second germanium-silicon layer, a third germanium-silicon layer and a second silicon layer that are vertically stacked from bottom to top on a substrate, wh...