US Patent Issued to International Business Machines on Aug. 11 for "Shifted-channel stacked FETs" (New York Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,679, issued on Aug. 11, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Shifted-channel stacked FETs" was invented by Shay Reboh (Guilderland, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Julien Frougier (Albany, N.Y.), Junli Wang (Slingerlands, N.Y.) and Tenko Yamashita (Schenectady, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices includes a bottom field effect transistor (FET) over a substrate, having a bottom channel and bottom source/drain structures. A bottom plug of dielectric material penetrates the substrate and that makes contact with a channel of the bottom FET. A top FET over the bottom FET has a ...