ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,672, issued on Aug. 11, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).
"Silicon carbide semiconductor device and method for producing same" was invented by Akimasa Kinoshita (Matsumoto-city, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide semiconductor device includes: a drift layer provided over an active portion and a breakdown voltage structure portion, the active portion has: a p-type base region provided in the drift layer; an n-type main region provided on the upper surface side of the base region; a p-type buried region provided in contact with the base region on the upper surface side of the drift layer; and...